IPM RAS / Structure / Staff / Shastin Valery

Shastin Valery

Head of laboratory, lead research associate of the Department for physics of semiconductors, Dr. Sci., Professor.

Personal data

Born on 18 June, 1948 in Nizhniy Novgorod.

Research interests

Semiconductors, IR lasers and laser physics, nonequilibrium state of the electrons.

Education

Faculty of radiophysics of N. I. Lobachevsky State University of Nizhniy Novgorod.

Career

  • 1971−1977 — engineer, junior research assistant of Radiophysical Research Institute;
  • 1977−1993 — junior research associate of the IAP RAS;
  • 1994-present. — senior research associate, leading research associate, head of the laboratory of the IPM RAS.

Publications

  • Landau quantization and hot hole stimulated emission in crossed electric and magnetic fields / V. N. Shastin, A. V. Murav'jov, Opt. Quantum Electronics 23 (2), S313 (1991).
  • Stimulated emission from donor transitions in silicon / S. G. Pavlov, R. Kh. Zhukavin, E. E. Orlova, V. N. Shastin, A. V. Kirsanov, A. H-W. Hubers, K. Auen and Riemann, Phys. Rev. Lett. 84 (22), 5220 (2000).
  • Terahertz lasers based on germanium and silicon / V. N. Shastin, Hübers H. W., S. G. Pavlov, Semiconductor Science and Technology 20, 1 (2005).
  • Stimulated Terahertz Stokes Emission of Silicon Crystals Doped with Antimony Donors / S. G. Pavlov, H. W. Hübers, J. N. Hovenier, T. O. Klaassen, D. A. Carder, P. G. Phillips, B. Redlich, H. Riemann, R. Kh. Zhukavin and V. N. Shastin, Phys. Rev. Let. 96, 037404 (2006).
  • the Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon / V. N. Shastin, R. Kh. Zhukavin, V. V. Tsyplenkov, K. A. Kovalevsky, S. G. Pavlov, H. W. Hübers et. al., Appl. «Phys. Lett. 90, 051101 (2006).
  • Stimulated terahertz emission due to electronic Raman scattering in silicon / V. N. Shastin, S. G. Pavlov, U. Böttger, J. N. Hovenier, N. V. Abrosimov, H. Riemann et. al., Appl. «Phys. Lett. 94, 171112 (2009).
  • the Spin-orbit coupling effect on bismuth donor lasing in stressed silicon / R. Kh. Zhukavin, K. A. Kovalevsky, V. V. Tsyplenkov, V. N. Shastin, S. G. Pavlov, h-W. Hubers, H. Riemann, N. V. Abrosimov and A. K. Ramdas, Appl. «Phys. Lett. 99, 171108 (2011).

Contact detail

Phone: +7 (831) 417-94-79

E-mail: shastin@ipmras.ru

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