Junior research associate of the Department for physics of semiconductors, PhD in Physics.
Born on 5 November, 1981 in Nizhniy Novgorod. Single.
Semiconductors, low-dimensional heterostructures, low-temperature measurement loop.
liceum #40 in Nizhniy Novgorod.
the Faculty of radiophysics of N. I. Lobachevsky State University of Nizhniy Novgorod.
- 2003-2004 - senior assistant researcher of the IPM RAS;
- 2004-present - junior research associate of the IPM RAS.
Multilayer strained Si-SiGe structures: it problems, interface characteristics and physical properties / L. K.Orlov, Z. J.Horvath, N. L.Ivina, V. I.Vdovin, E. A.Steinman, M. L.Orlov, Yu. A.Romanov, Opto-Electronics Review 11 (2), 85 (2003);
Anisotropy of the conductivity and high-frequency characteristics of two-dimensional quantum superlattices in a strong electric field / M. L.Orlov, Yu. A.Romanov, L. K.Orlov, Microelectronics Journal 36 (3-6) 396 (2005);
Room temperature tunable detection of subterahertz radiation in nanometer InGaAs term / f-Teppe, M. Orlov, A. El Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Y. Roelens, S. Bollaert, Appl. Phys.Lett. 89, 222109 (2006);
the Plasma wave resonant detection of terahertz radiations by nanometric transistors / W. Knap, A. El Fatimy, J. Torres, F. Teppe, M. Orlov, V. Gavrilenko, Low Temperature Physics 33 (2), 291 (2007);
Anomalous Electrical Properties of Si/Si1-xGex Heterostructures with an Electron Transport Channel in Si Layers / L. K. Orlov, Z. J. Horvath, M. L. Orlov, A. T. Lonchakov, N. L. Ivina, and L. Dobos, Physics of Solid State 50 (2), 330 (2008);
High-frequency signal rectification by using a field-effect heterotransistor with a short channel / M. L. Orlov, Semiconductors 42 (3), 339 (2008);
Current-Voltage Characteristics and Terahertz Emission Peculiarities of an In0.53Ga0.47As/In0.52Al0.48As HEMT with 2D Electron Gas / M. L. Orlov, Bulletin of the Russian Academy of Sciences: Physics 73 (1), 107 (2009);
the Mechanisms of Negative Resistivity and Generation of Terahertz Radiation in A Short-Channel In0.53Ga0.47As/In0.52Al0.48As Transistor / M. L. Orlov and L. K. Orlov, Semiconductors 43 (5), 652 (2009);
Ways and Peculiarities of Submillimeter Wavelength Detection with Short Channel Field-Effect Transistors / M. L. Orlov, A. N. Panin, and L. K. Orlov, Semicoductors 43 (6), 787 (2009);
Mechanisms of a negative differential conductivity in a shortchannel In0.52Ga0.48As/In0.53Al0.47As HEMT / M. L Orlov, Journal of Physics: Conference Series 193, 012020 (2009);
Detection mechanisms of terahertz radiation in a short gate In0.7Ga0.3As/In0.53Al0.47As field effect transistor / M. L Orlov and L. K Orlov, Journal of Physics: Conference Series 193, 012080 (2009);
Phone: +7 (831) 417-94-79