IPM RAS / Structure / Staff / Orlova Ekaterina

Orlova Ekaterina

Research associate of the Department for physics of semiconductors, PhD in Physics.

Research interests

Nonequilibrium population of the impurity states in semiconductors, amplification of terahertz radiation, electrodynamics of semiconductor lasers, Rabi impurity atoms.

Career

  • 1984 — 1989 — student of Radiophysics faculty of the Gorky state University ;
  • 1989 — 1990 — engineer research Radiophysics Institute
  • 1990 — 1992 — trainee researcher of the department for physics of semiconductors of the Institute of Applied Physics RAS;
  • 1993 — present — junior research associate, research associate of the department for physics of semiconductors of the Institute for Physics of Microstructures RAS;

In 2002 defended a PhD thesis on the topic of «Nonequilibrium population of shallow impurity states in semiconductors and amplification of radiation of far infrared range».

In 2003−2005 held scientific training in the group of Prof. P. Harrison at the University of Leeds, UK and in groups of Prof. W. Wenckebach and Prof. T. Klapwijkat Delft University of Technology, Delft, Netherlands.

Participated in more than 40 international conferences in Russia and abroad; 29 articles published in leading national and international journals (full list contains about seventy scientific papers).

Publications

Contact detail

Phone: +7 (831) 417−94−82 +263

E-mail: orlova@ipmras.ru

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