IPM RAS / Structure / Staff / Barysheva Maria

Barysheva Maria

н.с. отд. 130, PhD in Physics.

Лауреат стипендии им. ак. Разуваева (2006 г.), лауреат конкурсов «Лучшие аспиранты РАН» 2006 г., конкурса среди аспирантов и молодых ученых без степени фонда «Династия» 2007-2009 г. г.

Personal data

Born on 15 October, 1980 in Nizhniy Novgorod, graduated from the physico-mathematical school-Lyceum № 36, married

Education

N. I. Lobachevsky State University of Nizhniy Novgorod, Advanced School of General and Applied Physics;

postgraduate student in IPM RAS

Research interests

Interaction of x-rays with matter, multilayer x-ray mirrors, рефлектометрия, x-ray lithography

Career

2002-2004 trainee researcher the DTD. 130 of the IPM RAS

2004-2008 junior research associate DEP. 130 of the IPM RAS, postgraduate student

2008 - present research associate DEP. 130 of the IPM RAS

since 2005 - assistant of base chair «Physics of nanostructures and nanoelectronics»

Publications

  • S.S. Andreev, M. M. Barysheva, N. I. Chkhalo, S. A. Gusev, A. F. Pestov, V. N. Polkovnikov, N. N. Salashchenko, L. A. Shmaenok, Yu. A.?, S. Yu. Zuev. Multilayered mirrors based on the La/B4C system (B9C) for x-ray range near anomalous dispersion of boron (λ"6.7 nm). NIM, 2009
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