Research associate of the Department for physics of semiconductors, PhD in Physics.
Born on 8 July, 1979 in Dzerzhinsk.
the Physics of semiconductors and nanostructures, spectroscopy of solids, silicon optoelectronics.
secondary School #23 d. Dzerzhinsk.
Faculty of physics N. I. Lobachevsky State University of Nizhniy Novgorod.
- 1996 - 2002 - study in N. I. Lobachevsky State University of Nizhniy Novgorod;
- 2002 - 2005 - postgraduate study in the IPM RAS;
- 2005 - 2009-junior research associate of the IPM RAS;
- 2007 - PhD in Physics (thesis - «Luminescence properties of Si/SiGe heterostructures doped admixture of erbium»);
- 2010 - present - research associate of the IPM RAS.
Phone: +7 (831) 417-94-82 +263