IPM RAS / Structure / Staff / Andreyev Boris

Andreyev Boris

Leading research associate of the Department for physics of semiconductors
Dr. Sci.

Personal data

Born on 2 August, 1946 in Komsomolsk (Ivanovo region)

Research interests

the Physics of semiconductors, optical and photoelectric properties of semiconductor structures.

Education

School

School #1 in Komsomolsk.

University

the Faculty of physics of N. I. Lobachevsky State University of Nizhny Novgorod, Department of theoretical physics.

Career

  • 1969 - 1971 - serve in the Army.
  • 1971 - 1983 - junior research associate of the Institute of Chemistry of High-Purity Substances RAS.
  • 1982 - PhD in Chemistry (thesis : «Investigation of volatile inorganic hydrides method of THz radiospectroscopy»).
  • 1983 - 1997 - senior research associate, leading research associate of the Institute of Chemistry of High-Purity Substances RAS (since 1992. Institute of chemistry of high-purity substances of RAS).
  • 1997 - senior research associate of the department for physics of semiconductors of the IPM RAS.
  • 2004 - Dr. Sci. in Physics (thesis - «Infrared spectroscopy of impurities in silicon and Germany). A participant of 14 projects (leader in 6 projects) RFBR, a participant of 4 projects (leader of the group in 2 projects) INTAS, team leader in the project of the International scientific Fund, the participant of the project the Dutch research organization - RFBR. Published more than 200 works.

Publications

  1. B. A. Andreev, A. V. Burenin, Karyakin E. N., A. F. Krupnov, Shapin S. M., Submillimeter wave spectrum and molecular constants of N2O // J. Molec. Spectr. 1976. V. 62. P. 125.
  2. Parshin V. V., Heidinger, R. B. A. Andreev, Gusev A. V., V. B. Shmagin, Silicon as an advanced window material for high power gyrotrons//Journal of IR and MM Waves. 1995. V. 16. N.5.P. 863.
  3. Emtsev V. V. Andreev, B. A., Misuik A., W. Jung, and Schmalz K. Oxygen aggregation in Czochralski-grown silicon heat treated at 450 C under compressive stress. // Appl. "Phys. Lett. 1997. V. 71. N.2. P.264.
  4. Emtsev V. V., N. A. Sobolev, B. A. Andreev, Poloskin D. S., Shek E. I. Thermal donors in silicon doped with erbium // Solid State Phenomena 1997. V. 7 N.8. P. 207.
  5. B. Andreev, V. Chalkov, O. Gusev, A. Emel'yanov, Z. Krasil'nik, V. Kuznetsov, P. Pak, V. Shabanov, V. Shengurov, V. Shmagin, N. Sobolev, Stepikhova, M. S. Svetlov Realization of photo - and electroluminescent Si: Er structures by the method of sublimation molecular beam epitaxy (MOVPE) / / Nanotechnology 2001. V. 13. P.97.
  6. B. A. Andreev, T. Gregorkiewicz, Krasil'nik Z. F., H. Przybylin? ska and N. Q. Vinh Observation of Zeeman effect in photoluminescence of Er3+ ion imbedded in crystalline silicon // Physica B: Condensed Matter 2001. V. 308-310. P.340.
  7. N.V. Abrosimov, B. Andreev, S. Egorov, H. G. Grimmeiss, Jantsch W., G. Kocher and A. Zabrodskii Alloy fluctua in Si1? x ex crystals//Physica B: Condensed Matter 2001. V. 308-310 P.558.
  8. Krasilnik Z. F., Aleshkin V. Ya., Andreev B. A., Gusev A. B. Jantsch W, L. V. Krasilnikova, Krizhkov D. I. Kuznetsov, V. P., V. G. Shengurov, V. B. Shmagin, N. A. Sobolev, Stepikhova M. V., Yablonsky A. N., SMBE grown uniformely and selectively doped Si: Er structures for LEDs and lasers // in «Towards the first silicon laser» Eds. L. Pavesi, S. Gaponenko, L. Dal Negro, Kluwer Academic Publishers, 2003. P.445.
  9. B. A. Andreev, V. V. Emtsev, D. I. Kryzhkov, Kuritsyn D. I., and V. B. Shmagin, Study of IR Absorption and Photoconductivity Spectra of Thermal Double Donors in Silicon //Physica status solidi.(b) 2003. V. 235, N.1, P.79.
  10. N.Q. Vinh, M. Klik, B. A. Andreev, and T. Gregorkiewicz Spectroscopic either detail characterization of the Er-1 center in selectively doped silicon to appear in Materials Science and Engineering b. 2003. V. 105. p.150.
  11. A.A. Klochikhin, V. Yu. Davydov, V. V. Emtsev, A. V. Sakharov, V. A. Kapitonov, B. A. Andreev, Hai Lu, William J. Schaff Manifestation of the equilibrium hole distribution in photoluminescence of n - InN// Physica Status Solidi (b) 2005 Vol. 242(4),. P. R33-R35.
  12. A.A. Klochikhin, V. Yu. Davydov, V. V. Emtsev, A. V. Sakharov, V. A. Kapitonov, B. A. Andreev, Hai Lu, William J. Acceptor states in photoluminescence of n-InN//Phys.Rev.B 2005, Vol.71, p.195207-1-16
  13. N.Q.Vinh, S. Minissale, B. A. Andreev and T. Gregorkiewicz The Auger process of luminescence quenching in Si/Si:Er multinanolayers// Journal of Physics: Condensed Matter, Vol. 17 (2005) S2191-S2195
  14. Klochikhin A A, Davydov V a, Emtsev V, Sakharov A, Kapitonov V, Andreev B, Lu H, Schaff WJ Photoluminescence of n-InN with low electron concentrations PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 203 (1) P. 50-58 (2006)
  15. B.A. Andreev, T. Gregorkiewicz, W. Jantsch, Z. F. Krasilnik, D. I. Kryzhkov and V. P. Kuznetsov 1.54 mm Si: Er light-emitting diode with memory function Applied Physics Letters 88, 201101 (2006)
  16. T. Gregorkiewicz, B. A. Andreev, M. Forcales, I. Izeddin, W. Jantsch, Z. F. Krasil'nik, D. I. Kryzhkov, V. P. Kuznetsov, J. M. Zavada Er-doped electro-optical memory element for 1.5 mm silicon photonics // IEEE Journal of Selected Topics in Quantum Electronics, V.12(6), p.1539-1544 (2006)

Contact detail

Phone: +7 (831) 417-94-81

E-mail: boris@ipmras.ru

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