IPM RAS / Structure / Staff / Bekin Nickolay

Bekin Nickolay

Research associate of the Department for physics of semiconductors, PhD in Physics.

Personal data

Born on June 4, 1969.

Research interests

Physics of semiconductors, physics of low-dimensional heterostructures and superlattices, shallow impurities, laser physics.

Education

  • 1986 — 1993 — Nizhny Novgorod State University, Faculty of Physics;
  • 1997 — 2000 — post-graduate study in IPM RAS;
  • 2001 — PhD in Physics (thesis — «Study of optical and tunneling transitions in heterostructures with a complex valence band using effective mass approximation«, supervisor — V. Ya. Aleshkin).

Career

  • 1993 — present — trainee researcher, junior research associate, research associate of the IPM RAS.

Publications

  • The conduction band and selection rules for interband optical transitions in strained GeSi/Ge and GeSi/Si heterostructures / V. Ya. Aleshkin, N. A. Bekin, J. Phys. Condens. Matter 9, 4841 (1997);
  • Coulomb centers assisted tunneling in a delta-doped triple barrier SiGe heterostructure / R. Kh. Zhukavin, N. A. Bekin, D. N. Lobanov, Yu. N. Drozdov, P. A. Yunin, M. N. Drozdov, D. A. Pryakhin, E. D. Chhalo, D. V. Kozlov, A. V. Novikov, V. N. Shastin, Physica E 57, 42 (2014).

Contact detail

Phone: +7 (831) 417-94-79 +260

E-mail: nbekin@ipmras.ru

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