IPM RAS / Structure / Staff / Baidakova Natalia

Baidakova Natalia

Junior research associate of the Department for physics of semiconductors.

Personal data

Born on 2 April, 1987 in Nizhniy Novgorod. Married.

Research interests

the Physics of semiconductors and nanostructures, spectroscopy, luminescence.

Education

School

liceum #82 in Nizhniy Novgorod.

University

Advanced School of General and Applied Physics, N. I. Lobachevsky State University of Nizhniy Novgorod.

Career

  • 2007 - 2010 - electronic engineer of the IPM RAS;
  • 2010 - present - junior research associate of the IPM RAS;

Publications

  • Narrow photoluminescence peak from Ge(Si) islands embedded between the tensile-strained Si layers / M. Shaleev, A. Novikov, N. Baydakova, A. Yablonskiy, A. Kuznetsov, Yu. Drozdov, D. Lobanov and Z. Krasilnik, Phys. Status Solidi 8 (3), 1055 (2011).
  • Contact detail

    E-mail: banatale@ipmras.ru

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