IPM RAS / Structure / Staff / Novikov Alexey

Novikov Alexey

anovikov.jpg

Deputy director for science and technology of IMP RAS, Head the laboratory of molecular beam epitaxy of semiconductor heterostructures of the Department for physics of semiconductors, PhD in Physics

Born on 6 March, 1968

Research interests

Molecular-beam epitaxy of semiconductor heterostructures, silicon, germanium, A3N heterostructres, self-assembled quantum dots and nanoislands, segregation, luminescence, microscopy

Education

  • 1992 — Department of Applied physics and microelectronics of Lobachevsky State University of Nizhniy Novgorod;
  • 1993 — 1996 — postgraduate student in Lobachevsky State University of Nizhniy Novgorod;
  • June 2001 — PhD dissertation «Study of the growth and properties of self-organizing nanoislands GeSi on Si (001)».

Career

  • 1992 — 1993 — engineer in Physico-Technical Research Institute at Lobachevsky State University of Nizhniy Novgorod;
  • 1993 — 1996 — postgraduate student in Lobachevsky State University of Nizhniy Novgorod;
  • 1996 — 2003 — junior / senior research associate of the IPM RAS;
  • May-July 1999 — work on probation in laboratory of Prof. Y. Shiraki, University of Tokyo, Tokyo, Japan;
  • 2003 — 2015 — head of the laboratory of molecular beam epitaxy of Si/Ge structures in the IPM RAS;
  • September-October2003 — work on probation in laboratory of Prof. O.G. Schmidt, Max-Planck-Institute for Solid State Research, Stuttgart, Germany;
  • April-July2007 — work on probation in laboratory of Prof. J. Kolodzey, Department of Electrical and Computer Engineering, University of Delaware, USA;
  • 2015 — present — head of the laboratory of molecular beam epitaxy of semiconductor heterostructures in the IPM RAS;
  • 2018 — present — deputy director for science and technology
  • 2003 — present — assistant professor in Nizhny Novgorod State University, lecture course «Basics of semiconductor technology»

Publications

  • Self-organization of germanium nanoislands obtained in silicon by molecular-beam epitaxy / V. Ya. Aleshkin, N. A. Bekin, N. G. Kalugin, Z. F. Krasil’nik, A. V. Novikov, V. V. Postnikov, H. Seyringer, JETP Letters 67 (1), 48−53 (1998)
  • Transition from «dome» to «pyramid» shape of self-assembled GeSi islands / N. V. Vostokov, I. V. Dolgov, Yu. N. Drozdov, Z. F. Krasil’nik, D. N. Lobanov, L. D. Moldavskaya, A.V.Novikov, V. V. Postnikov, D. O. Filatov, Journal of Crystal Growth, 209, 302−305 (2000)
  • The elastic strain and composition of self-assembled GeSi islands on Si (001) / Z. F. Krasil’nik, N. V. Vostokov, S. A. Gusev, I. V. Dolgov, Yu. N. Drozdov, D. N. Lobanov, L. D. Moldavskaya, A.V.Novikov, V. V. Postnikov, D. O. Filatov, Thin Solid Films, 367, 171−175 (2000)
  • The relation between composition and sizes of GeSi/Si (001) islands grown at different temperatures / N. V. Vostokov, S. A. Gusev, Yu. N. Drozdov, D. N. Lobanov, L. D. Moldavskaya, A.V.Novikov, V. V. Postnikov, Z. F. Krasil’nik, M. Miura, N. Usami, Y. Shiraki, V. A. Uakhimchuk, M. Ya. Valax, N. Mestres, J. Pascual, Phys. Low-Dim. Struct., ¾, 295−302 (2001)
  • Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si (001) self-assembled islands / A.V.Novikov, B. A. Andreev, N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil’nik, D. N. Lobanov, L. D. Moldavskaya, A. N. Yablonskiy, M. Miura, N. Usami, Y. Shiraki, M. Ya. Valakh, N. Mesters and J. Pascual, Materials Science and Engineering B 89, 62−65 (2002)
  • Low-Energy Photoluminescence of Structures with GeSi/Si (001)Self-Assembled Nanoislands / N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil’nik, D. N. Lobanov, A. V. Novikov, A. N. Yablonskii, JETP Letters 76, 365−368 (2002)
  • Investigation of the optical and acoustical phonon modes in Si1-xGex QD SLs / V. N. Dzhagan, Z. F. Krasil’nik, P. M. Lytvyn, A.V.Novikov, M. Ya. Valakh, V. O. Yukhymchuk, Semiconductor Physics, Quantum Electronics & Optoelectronics (Ukraine), 6 (2), 164−168 (2003)
  • Photoluminescence of GeSi/Si (001) self-assembled islands with dome and hut shape / A.V. Novikov, M. V. Shaleev, D. N. Lobanov, A. N. Yablonsky, N. V. Vostokov, Z. F. Krasilnik, Physica E 23, 416−420 (2004)
  • Visualization of buried SiGei quantum dots at cleavages by cross-sectional atomic force microscopy / M. S. Dunaevskii, A. N. Titkov Z. F. Krasilnik, A.V.Novikov D. N. Lobanov, and R. L. Laiho, Appl. Phys. Lett. 85, 1999−2001 (2004)
  • Growth and photoluminescence of Ge (Si) self-assembled islands obtained during the deposition of Ge on a strained SiGe layer /D. N. Lobanov, A. V. Novikov, N. V. Vostokov, Y. N. Drozdov, A. N. Yablonskiy, Z. F. Krasilnik, M. Stoffel, U. Denker, O. G. Schmidt, Optical Materials 27, 818−821 (2005)
  • Ge self-assembled islands grown on SiGe/Si (001) relaxed buffer layers / M. V. Shaleev, A. V. Novikov, O. A. Kuznetsov, A. N. Yablonsky, N. V. Vostokov, Yu. N. Drozdov, D. N. Lobanov, Z. F. Krasilnik, Materials Science and Engineering B, 124−125C, pp. 466−469 (2005)
  • Photoluminescence of Ge (Si) self-assembled islands embedded in a tensile-strained Si laye r/ M. V. Shaleev, A. V. Novikov, A. N. Yablonskiy, Y. N. Drozdov, D. N. Lobanov, Z. F. Krasilnik, O. A. Kuznetsov, Appl. Phys. Lett.88, 011914 (2006)
  • Photoluminescence of dome and hut shaped Ge (Si) self-assembled islands embedded in a tensile-strained Si layer / M. V. Shaleev, A. V. Novikov, A. N. Yablonskiy, Y. N. Drozdov, D. N. Lobanov, Z. F. Krasilnik, O. A. Kuznetsov, Applied Physics Letters 91 021916 (2007)
  • Intense photoluminescence from Ge (Si) self-assembled islands embedded in a tensile-strained Si layer / A. V. Novikov, M. V. Shaleev, A. N. Yablonskiy, O. A. Kuznetsov, Yu N Drozdov, D. N. Lobanov, Z. F. Krasilnik, Semiconductor Science and Technology 22, pp. S29-S32 (2007)
  • Radiation hardness of GeSi heterostructures with thin Ge layers / J. P. Leitão, N. M. Santos, N. A. Sobolev, M. R. Correia, N. P. Stepina, M. C. Carmo, S. Magalhães, E. Alves, A. V. Novikov, M. V. Shaleev, D. N. Lobanov and Z. F. Krasilnik, Materials Science and Engineering B 147, pp. 191−194 (2008)
  • Comparative Analysis of Photoluminescence and Electroluminescence of Multilayered Structures with Self-Assembled Ge (Si)/Si (001) Islands / Yu. N. Drozdov, Z. F. Krasilnik, K. E. Kudryavtsev, D. N. Lobanov, A. V. Novikov, M. V. Shaleev, D. V. Shengurov, V. B. Shmagin, A. N. Yablonskii, Semiconductors 42 (3), pp. 286−290 (2008)
  • Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3−1.55 mm / D. N. Lobanov, A. V. Novikov, K. E. Kudryavtsev, A. N. Yablonskiy, A. V. Antonov, Yu. N. Drozdov, D. V. Shengurov, V. B. Shmagin, Z. F. Krasilnik, N. D. Zakharov, P. Werner, Physica E 41, 935−938 (2009)
  • Features of two-dimensional to three-dimensional growth modetransition of Ge in SiGe/Si (001) heterostructures with strainedlayers /D. V. Yurasov, Yu. N. Drozdov, M. V. Shaleev, A. V. Novikov, Appl. Phys. Lett. 95, 151902 (2009)
  • Observation of the electron-hole liquid in Si1−xGex/ Si quantum wells by steady-state and time-resolved photoluminescence measurements/ V. S. Bagaev, V. S. Krivobok, S. N. Nikolaev, A. V. Novikov, E. E. Onishchenko, M. L. Skorikov, «Phys. Rev. B 82,115313−5 (2010)
  • Distinctions in the Ge wetting layer formation and self-assembled island nucleation between single- and multilayer SiGe/Si (001) structures / D. V. Yurasov, M. V. Shaleev and А. V. Novikov, J. of Crystal Growth 313, 12−15 (2010)
  • SiGe nanostructures with self-assembled islands for Si-basedoptoelectronic / Z. F. Krasilnik, A. V. Novikov, D. N. Lobanov, K. E. Kudryavtsev, A. V. Antonov, S. V. Obolenskiy, N. D. Zakharov, P Werner, Semiconductor Science and Technology 26, 014209 (2011)
  • Narrow photoluminescence peak from Ge (Si) islands embedded between tensile-strained Si layers / M. Shaleev, A. Novikov, N. Baydakova, A. Yablonskiy, O. Kuznetsov, Y. Drozdov, D. Lobanov, and Z. Krasilnik, Physica Status Solidi С 8 (3), 1055−1059 (2011)
  • Usage of antimony segregation for selective doping of Si in molecular beam epitaxy / D. V. Yurasov, M. N. Drozdov, A. V. Murel, M. V. Shaleev, N. D. Zakharov, A. V. Novikov, J. of Appl. Phys. 109, 113533 (2011)
  • Photoluminescence excitation spectroscopy technique modified for studying structures with self-assembled Ge (Si)/Si (001) nanoislands / N. A. Baidakova, A. V. Novikov, D. N. Lobanov, and A. N. Yablonsky, Technical Physics Letters 38 (9), 828−831 (2012)
  • Barrier-Height Modification in Schottky Silicon Diodes with Highly Doped 3D and 2D Layers / A. V. Murel, A. V. Novikov, V. I. Shashkin, and D. V. Yurasov, Semiconductors V. 46 (11), pp. 1358−1361 (2012)
  • Transition from planar to island growth mode in SiGe structures fabricated on SiGe/Si (001) strain-relaxed buffers / M. V. Shaleev, A. V. Novikov, D. V. Yurasov, J. M. Hartmann, O. A. Kuznetsov, D. N. Lobanov, Z. F. Krasilnik, Appl. Phys. Lett. 101, 151601 (2012)
  • Time-resolved photoluminescence from self-assembled Ge (Si) islands in multilayer SiGe/Si and SiGe/SOI structures / A. N. Yablonskiy, N. A. Baidakova, A. V. Novikov, D. N. Lobanov, Semiconductors 47(11), pp. 1496−1499 (2013)
  • Coulomb centers assisted tunneling in a δ-doped triple barrier SiGe heterostructures / R. Kh. Zhukavin, N. A. Bekin, D. N. Lobanov, Yu. N. Drozdov, P. A. Yunin, M. N. Drozdov, D. A. Pryakhin, E. D. Chhalo, D. V. Kozlov, A. V. Novikov, V. N. Shastin, Physica E 57, 42−46 (2014)
  • Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: interdependence of growth conditions and structure parameters / D. V. Yurasov, M. N. Drozdov, N. D. Zakharov and A. V. Novikov, J. of Crystal Growth 396, 66−70 (2014)
  • Investigation of deformations and strain fields in silicon matrix structures embedded with vertically stacked Ge (Si) self-assembled islands / D.A. Pavlov, A.I. Bobrov, A.V. Novikov, D.S. Sorokin, N.V. Malekhonova, A.V. Pirogov, D.E. Nikolitchev, A.V. Boryakov, Appl. Phys. Lett. 105, 161910 (2014)
  • Real-time measurement of substrate temperature in molecular beam epitaxy using low-coherence tandem interferometry / D.V. Yurasov, A.Yu. Luk’yanov, P.V. Volkov, A.V. Goryunov, A.D. Tertyshnik, M.N. Drozdov and A.V. Novikov, J. Crystal Growth 413, 42−45 (2015)
  • Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer / N.A. Baidakova, A.I. Bobrov, M.N. Drozdov, A.V. Novikov, D.A. Pavlov, M.V. Shaleev, P.A. Yunina, D.V. Yurasov, and Z.F. Krasilnik, Semiconductors 49 (8), 1104−1110 (2015)
  • Excitonic luminescence of SiGe/Si quantum wells δ-doped with boron / V.S. Bagaev, V.S. Krivobok, S.N. Nikolaev, A.V. Novikov, E.E. Onishchenko, A.A.Pruchkina, J. Appl. Phys. 117, 185705 (2015)
  • Impact of growth and annealing conditions on the parameters of Ge/Si (001) relaxed layers grown by molecular beam epitaxy / D.V. Yurasov, A.I. Bobrov, V.M. Daniltsev, A.V. Novikov, D.A. Pavlov, E.V. Skorokhodov, M.V. Shaleev, and P.A. Yunin, Semiconductors 49, 1415−1420 (2015)
  • Control of surface dip diameter in Si-based photonic nanostructures by changing growth temperature of Ge quantum dot multilayer structures and its impact on their optical properties / O. Aonuma, Yu. Hoshi, T. Tayagaki, A. Novikov, D. Yurasov, and N. Usami, Jap. J. of Appl. Phys. 54, 08KA01 (2015)
  • Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy / D.V. Yurasov, A.V. Antonov, M.N. Drozdov, V.B. Schmagin, K.E. Spirin, A.V. Novikov, J. Appl. Phys.118, 145701 (2015)
  • Features of InN Growth by Nitrogen-Plasma-Assisted MBE at Different Ratios of Fluxes of Group-III and -V Elements / D.N. Lobanov, A.V. Novikov, B.A. Andreev, P.A. Bushuykin, P.A. Yunin, E.V. Skorohodov, L.V. Krasilnikova, Semiconductors 50 (2), 261−265 (2016)
  • Quantitative depth profiling of Si1−xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry / M.N. Drozdov, Y.N. Drozdov, A. Csik, A.V. Novikov, K. Vad, P.A. Yunin, D.V. Yurasov, S.F. Belykh, G.P. Gololobov, D.V. Suvorov, A. Tolstogouzov, Thin Solid Films 607, 25−31 (2016)
  • Features of SOI substrates heating in MBE growth process obtained by low-coherence tandem interferometry / P.V. Volkov, А.V. Goryunov, D.N. Lobanov, А.Yu. Lukyanov, А.V. Novikov, А.D. Tertyshnik, М.V. Shaleev, D. V. Yurasov, J. Cryst. Growth 448, 89−92 (2016) (doi.org/10.1016/j.jcrysgro.2016.05.029)
  • Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si (001) substrate / V. Ya. Aleshkin, N.V. Baidus, A.A. Dubinov, A.G. Fefelov, Z.F. Krasilnik, K.E. Kudryavtsev, S.M. Nekorkin, A.V. Novikov, D.A. Pavlov, I.V. Samartsev, E.V. Skorokhodov, M.V. Shaleev, A.A. Sushkov, A.N. Yablonskiy, P.A. Yunin, D.V. Yurasov, Appl. Phys. Lett. 109 (6), 061111−5 (2016) (doi.org/10.1063/1.4961059)
  • Electrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si (100) with Ge/GaAs buffer / N.V. Kryzhanovskaya, E.I. Moiseev, Yu.S. Polubakina, M.V. Maximov, M.M. Kulagin, S.I. Troshnikov, YU.M. Zadiranov, A.A. Lipovskii, N.V. Baidus, A.A. Dubinov, Z.F. Krasilnik, A.V. Novikov, D.A. Pavlov, A.V. Rykov, A.A. Sushkov, D.V. Yurasov, A.E. Zhukov, Optical Express 25 (14), 16754−16760 (2017) (doi.org/10.1364/OE.25.016754)
  • Quantum dot emission driven by Mie resonances in silicon nanostructures / V. Rutckaia, F. Heyroth, A. Novikov, M. Shaleev, M. I. Petrov, J. Schilling, Nano Letters 17 (11), 6886−6892 (2017) (doi: 10.1021/acs.nanolett.7b03248)
  • Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon / D.V. Yurasov, A.V. Novikov, M.V. Shaleev, N.A. Baidakova, E.E. Morozova, E.V. Skorokhodov, Y. Ota, A. Hombe, Y. Kurokawa, N. Usami, Materials Science in Semiconductor Processing 75, 143−148 (2018) (doi.org/10.1016/j.mssp.2017.11.032)
  • Structural and electrical properties of Ge-on-Si (001) layers with ultra heavy n-type doping grown by MBE / D.V. Yurasov, A.V. Antonov, M.N. Drozdov, P.A. Yunin, B.A. Andreev, P.A. Bushuykin, N.A. Baydakova, A.V. Novikov, J. Crystal Growth 491, 26−30 (2018) (doi.org/10.1016/j.jcrysgro.2018.03.037)
  • Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures / B.A. Andreev, K.E. Kudryavtsev, A. N Yablonskiy, D.N. Lobanov, P.A. Bushuykin, L.V. Krasilnikova, E.V. Skorokhodov, P.A. Yunin, A.V. Novikov, V. Yu Davydov, Z.F. Krasilnik, Scientific Reports (2018) 8:9454 (doi:10.1038/s41598−018−27911−2)
  • MOCVD growth of InGaAs/GaAs/AlGaAs laser structures with quantum wells on Ge/Si substrates / N. Baidus, V. Aleshkin, A. Dubinov, K. Kudryavtsev, S. Nekorkin, A. Novikov, D. Pavlov, A. Rikov, A. Sushkov, M. Shaleev, P. Yunin, D. Yurasov, Z. Krasilnik, Crystals 8, 311 (2018) (doi:10.3390/cryst8080311)
  • Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics / A.V. Novikova, D.V. Yurasov, E.E. Morozova, E.V. Skorohodov, V.A. Verbusa, A.N. Yablonskiy, N.A. Baidakova, N.S. Gusev, K.E. Kudryavtsev, A. V. Nezhdanov, A.I. Mashin, Semiconductors 52 (11), 1442−1447 (2018) (doi 10.1134/S1063782618110167).
  • Light emission from Ge (Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various period with and without cavities / M.V. Stepikhova, A.V. Novikov, A.N. Yablonskiy, M.V. Shaleev, D.E. Utkin, V.V. Rutckaia, E.V. Skorokhodov, S.M. Sergeev, D.V. Yurasov, Z.F. Krasilnik, Semiconductor Science and Technology 34, 024003 (7pp) (2019) (doi.org/10.1088/1361−6641/aaf7a7).

Contact detail

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E-mail: anov@ipmras.ru

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